3D integrated electronic devices and plasmon components have made important breakthroughs

    In 2015, the International Technology Roadmap for Semiconductors (ITRS) announced that Moore's Law was approaching its limits, prompting increased interest in silicon-based complementary metal-oxide-semiconductor (CMOS) technology. Among various emerging solutions, optoelectronic integration offers high bandwidth and low latency, while 3D integration promises higher density and energy efficiency. Combining these two approaches, 3D optoelectronic integration has become a promising direction. However, integrating electronic and photonic components in 3D remains challenging due to material and process incompatibilities. Emerging low-dimensional materials like carbon nanotubes and two-dimensional (2D) materials show great potential as electronic and optoelectronic components for 3D integration. Meanwhile, plasmonics offer excellent subwavelength light control, addressing the mismatch between electronic and photonic feature sizes. This has sparked significant interest in subwavelength optoelectronic integration. Professor Peng Lingmao from Peking University’s Department of Information Science and Technology proposed a "metal engineering" strategy to design a hole-like plasmonic structure using gold (Au). The gold film provides nanometer-level flatness, meeting the requirements for top active device fabrication without mechanical polishing. All interconnects and electrostatic gates are made from gold. Since low-dimensional materials have atomic-layer thickness, ion implantation is not suitable for polarity control. Instead, adjusting the work function of contact metals allows for P-type and N-type devices, enabling CMOS-compatible 3D integration of plasmonics and electronics. This 3D architecture enables passive plasmonic components to control and transmit light, while active devices receive and process signals. A receiver with unidirectional light control, wavelength-polarization multiplexer, and 3D integrated loop with CMOS demonstrates the feasibility of this approach. This breakthrough offers a new pathway for post-Moore’s Law architectures. On December 13, 2018, the research was published in *Nature Electronics* under the title “Three-Dimensional Integration of Plasmonics and Nanoelectronics.” Liu Wei, a Ph.D. student at the Frontier Interdisciplinary Research Institute (now a postdoc at UCLA), was the first and corresponding author, with Peng Lingmao and Professor Zhang Jiasen as co-authors. This marked the first public report on 3D integration of electronic devices and plasmonic components. The study was supported by the National Key R&D Program “Nano Research” and the National Natural Science Foundation.

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