In 2015, the International Semiconductor Technology Development Roadmap (ITRS) Committee declared that Moore’s Law was reaching its limits, signaling a shift in the development of silicon-based complementary metal oxide semiconductor (CMOS) technology. As traditional scaling became more challenging, researchers turned to alternative approaches. Among various proposals, optoelectronic integration and 3D integration emerged as promising solutions. Optoelectronic integration offers high bandwidth and low transmission delay, while 3D integration holds potential for higher integration density and improved energy efficiency. Combining these two concepts, 3D optoelectronic integration could represent a new direction for future electronics.
However, integrating electronic and photonic devices in a 3D structure remains a challenge due to material and fabrication incompatibilities. Conventional materials struggle to support both electronic and optical components at the same scale. To address this, emerging low-dimensional semiconductor materials—such as carbon nanotubes and two-dimensional materials—are being explored as ideal candidates for optoelectronic applications. These materials can be used in thin films, offering flexibility and compatibility with advanced integration techniques.
Another key innovation lies in plasmonics, which enables efficient control of light at sub-wavelength scales. This capability helps bridge the gap between electronic and photonic device sizes, making it a valuable tool in sub-wavelength optoelectronic integration.
Professor Peng Lingmao from the Key Laboratory of Nanodevice Physics and Chemistry at Peking University proposed a novel approach using "metal engineering" to design a hole-like plasmonic structure based on gold (Au). This method allows for precise light control and simplifies the fabrication process. The gold film provides a smooth surface, eliminating the need for mechanical polishing and enabling the construction of top active devices directly on the substrate.
All interconnect lines and electrostatic gate structures are fabricated using gold, ensuring compatibility with low-dimensional semiconductors. Since these materials have atomic-layer thickness, their polarity is difficult to adjust via ion implantation. Instead, adjusting the work function of the contact metal becomes an effective solution. By combining high and low work function metals, the team successfully created P-type (HM-HM), N-type (LM-LM), and diode (LM-HM) devices, paving the way for CMOS-compatible, low-temperature fabrication of 3D integrated plasmonic components.
The system functions by using passive plasmonic components for light control and signal transmission, while active devices handle signal reception and processing. A receiver with unidirectional light control, a wavelength-polarization multiplexer, and a 3D integrated loop with CMOS were demonstrated. This breakthrough offers a significant reference for post-Moore’s Law architectures.
On December 13, 2018, the research was published online in *Nature Electronics* under the title “Three-Dimensional Integration of Plasmonics and Nanoelectronics.†Liu Wei, a Ph.D. student at the Frontier Interdisciplinary Research Institute (now a postdoctoral researcher at UCLA), was the first author and corresponding author. Professor Peng Lingmao and Professor Zhang Jiasen from the School of Physics were co-authors. This study marked the first public report on 3D integration of electronic devices and plasmonic components.
The work was supported by the National Key Research and Development Program “Nano Research†and the National Natural Science Foundation. It represents a major step forward in the development of next-generation optoelectronic systems.
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